Product Summary
The is 2SD1851-TB-E a PNP epitaxial silicon transistor.
Parametrics
2SD1851-TB-E absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: (–)80V; (2)Collector-to-Emitter Voltage, VCEO: (–)50V; (3)Emitter-to-Base Voltage, VEBO: (–)10V; (4)Collector Current, IC: (–)200mA; (5)Collector Current (Pulse), ICP: (–)400mA; (6)Collector Dissipation, PC: 200mW; (7)Junction Temperature, Tj: 150℃; (8)Storage Temperature, Tstg: –55 to +150℃.
Features
2SD1851-TB-E features: (1)AF amplifier, solenoid drivers, LED drivers; (2)Darlington connection; (3)High DC current gain; (4)Very small-sized package permitting sets to be made smaller and slimer.
Diagrams
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![]() 2SD1006 |
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![]() 2SD1007 |
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