Product Summary

The is 2SD1851-TB-E a PNP epitaxial silicon transistor.

Parametrics

2SD1851-TB-E absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: (–)80V; (2)Collector-to-Emitter Voltage, VCEO: (–)50V; (3)Emitter-to-Base Voltage, VEBO: (–)10V; (4)Collector Current, IC: (–)200mA; (5)Collector Current (Pulse), ICP: (–)400mA; (6)Collector Dissipation, PC: 200mW; (7)Junction Temperature, Tj: 150℃; (8)Storage Temperature, Tstg: –55 to +150℃.

Features

2SD1851-TB-E features: (1)AF amplifier, solenoid drivers, LED drivers; (2)Darlington connection; (3)High DC current gain; (4)Very small-sized package permitting sets to be made smaller and slimer.

Diagrams

2SD1851-TB-E package dimension

2SD1000
2SD1000

Other


Data Sheet

Negotiable 
2SD1001
2SD1001

Other


Data Sheet

Negotiable 
2SD1005
2SD1005

Other


Data Sheet

Negotiable 
2SD1012F-SPA
2SD1012F-SPA

ON Semiconductor

Transistors Bipolar (BJT) BIP NPN 0.7A 15V

Data Sheet

0-1: $0.27
1-25: $0.24
25-100: $0.20
100-250: $0.17
2SD1012F-SPA-AC
2SD1012F-SPA-AC

ON Semiconductor

Transistors Bipolar (BJT) BIP NPN 0.7A 15V

Data Sheet

0-2500: $0.10
2500-3000: $0.10
3000-5000: $0.10
5000-10000: $0.09
2SD1012G-SPA
2SD1012G-SPA

ON Semiconductor

Transistors Bipolar (BJT) BIP NPN 0.7A 15V

Data Sheet

0-1: $0.27
1-25: $0.24
25-100: $0.20
100-250: $0.17