(Hong Kong)
Product Summary
The BLF248 is a Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
Parametrics
BLF248 absolute maximum ratings: (1)VDS drain-source voltage: 65 V; (2)±VGS gate-source voltage: 20 V; (3)ID DC drain current: 25 A; (4)Ptot total power dissipation: 500 W; (5)Tstg storage temperature: -65 to 150℃.
Features
BLF248 features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Gold metallization ensures excellent reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 BLF248 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 300W VHF P-P |
Data Sheet |
Negotiable |
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BLF248,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 300W VHF P-P |
Data Sheet |
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