Product Summary

The DS1250Y-70IND+ is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. The DS1250Y-70IND+ has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. The DS1250Y-70IND+ can be used in place of existing 512k x 8 static RAMs directly conforming to the popular byte-wide 32-pin DIP standard. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Parametrics

DS1250Y-70IND+ absolute maximum ratings: (1)Voltage on Any Pin Relative to Ground: -0.3V to +6.0V; (2)Operating Temperature, Commercial: 0 to +70℃; Industrial: -40 to +85℃; (3)Storage Temperature: -40 to +85℃; (4)Lead Temperature (soldering, 10s): +260℃; (5)Soldering Temperature (reflow, PowerCap): +260℃.

Features

DS1250Y-70IND+ features: (1)10 years minimum data retention in the absence of external power; (2)Data is automatically protected during power loss; (3)Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory; (4)Unlimited write cycles; (5)Low-power CMOS; (6)Read and write access times of 70ns; (7)Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time ; (8)Full ±10% VCC operating range; (9)Optional ±5% VCC operating range; (10)Optional industrial temperature range of -40 to +85℃, designated IND ; (11)JEDEC standard 32-pin DIP package; (12)PowerCap Module (PCM) package: Directly surface-mountable module; Replaceable snap-on PowerCap provides lithium backup battery; Standardized pinout for all nonvolatile SRAM products; Detachment feature on PCM allows easy removal using a regular screwdriver.

Diagrams

DS1250Y-70IND+ pin assignment

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