Product Summary

The FP2189-G is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface- mount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1 -dB compression, while providing 18.5 dB gain at 900 MHz. The applications of theFP2189-G are (1)Mobile Infrastructure; (2)CATV / DBS; (3)W-LAN / ISM; (4)RFID; (5)Defense / Homeland Security; (6)Fixed Wireless.

Parametrics

FP2189-G absolute maximum ratings: (1)Operating Case Temperature: -40 to +85℃; (2)Storage Temperature: -55 to +125℃; (3)DC Power: 4.0 W; (4)RF Input Power (continuous): 6 dB above Input P1dB; (5)Drain to Gate Voltage, Vdg: +14 V; (6)Junction Temperature: +220℃.

Features

FP2189-G features: (1)50 – 4000 MHz; (2)+30 dBm P1dB; (3)+43 dBm Output IP3; (4)High Drain Efficiency; (5)18.5 dB Gain @ 900 MHz; (6)Lead-free/Green/RoHS-compliant SOT-89 Package; (7)MTTF >100 Years.

Diagrams

FP2189-G block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FP2189-G
FP2189-G

TriQuint Semiconductor

RF Mixer 50-4000MHz +30dBm P1dB

Data Sheet

0-1: $6.35
1-25: $4.70
25-100: $3.47
100-250: $3.30
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