Product Summary

The SST34HF3284-70-4E-L1PE is a 32 Mbit Concurrent SuperFlash 4/8 Mbit PSRAM ComboMemory. The devics integrates either a 2M x16 or 4M x8 CMOS flash memory bank with either a 256K x16 or 512K x16 CMOS pseudo SRAM (PSRAM) memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS Super-Flash technology incorporating the split-gate cell design and thick-oxide tunneling injectorto attain better reliability and manufacturability compared with alternate approaches. The SST34HF3284-70-4E-L1PE is ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system.

Parametrics

SST34HF3284-70-4E-L1PE absolute maximum ratings: (1)Operating Temperature: -20℃ to +85℃; (2)Storage Temperature: -65℃ to +125℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD +0.3V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -1.0V to VDD +1.0V; (5)Package Power Dissipation Capability (TA= 25℃): 1.0W; (6)Surface Mount Solder Reflow Temperature: 260℃ for 10 seconds; (7)Output Short Circuit Current: 50 mA.

Features

SST34HF3284-70-4E-L1PE features: (1)Flash Organization: 2M x16 or 4M x8; (2)Dual-Bank Architecture for Concurrent Read/Write Operation; (3)PSRAM Organization; (4)Single 2.7-3.3V Read and Write Operations; (5)Superior Reliability; (6)Low Power Consumption; (7)Hardware Sector Protection (WP#); (8)Hardware Reset Pin (RST#); (9)Byte Selection for Flash (CIOF pin); (10)Sector-Erase Capability; (11)Flash Chip-Erase Capability; (12)Erase-Suspend / Erase-Resume Capabilities; (13)Read Access Time; (14)Latched Address and Data.

Diagrams

PIC16F886T-I/SO block diagram

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