STP10NK80ZFP

Power MOSFET, TO-220F, 800 V, 6 A, 40W, STP10NK80ZFP

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.38~1.22 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.38~1.22

PartNumber:: STP10NK80ZFP

Brand:: STMicroelectronics - ST | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. hellen's store

(Hong Kong)

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-11-29

From Other Seller

Part Number:STP10NK80ZFP
US $0.38 - 1.22
74AHC2G08VS SOP-8

US $2.00 - 2.00 / Piece
(0) Remove
AT45DB161B-TU

US $1.00 - 2.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The STP10NK80ZFP is a Zener-Protected SuperMESH Power MOSFET. The STP10NK80ZFP is obtained through an extreme optimization of ST’s well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The applications of the STP10NK80ZFP include high current, high speed switching, switch mode power supplies, dc-ac converters for welding, ups and motor drive.

Parametrics

STP10NK80ZFP absolute maximum ratings: (1)VDS Drain-source Voltage (VGS =0): 800 V; (2)VDGR Drain-gate Voltage: 800 V; (3)VGS Gate- source Voltage: ± 30 V; (4)ID Drain Current: 9 A; (5)ID Drain Current: 6 A; (6)IDM Drain Current (pulsed): 36 A; (7)PTOT Total Dissipation: 40W.

Features

STP10NK80ZFP features: (1)typical RDS(on) = 0.78Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.