Product Summary

The bgf1801-10 is a 10 W LDMOS power amplifier module for base station amplifier applications in the 1805 to 1880 MHz band. The applications of the bgf1801-10 include Base station RF power amplifiers in the 1805 to 1880 MHz frequency range, GSM, GSM EDGE, multi carrier applications, Macrocell (driver stage) and Microcell (final stage).

Parametrics

bgf1801-10 absolute maximum ratings: (1)DC supply voltage: 30 V; (2)input drive power: 100 mW; (3)load power: 15 W; (4)storage temperature: -30 to +100 ℃; (5)operating mounting base temperature: -20 to +85 ℃.

Features

bgf1801-10 features: (1)Typical GSM EDGE performance at a supply voltage of; (2)26 V: Output power = 3.5 W, Gain = 26.5 dB, Efficiency = 19%, ACPR < -63 dBc at 400 kHz, rms EVM < 1.2%, peak EVM < 3.6%; (3)Low distortion to CDMA signals; (4)Excellent 2-tone performance; (5)Low die temperature due to copper flange; (6)Integrated temperature compensated bias; (7)50 W input/output impedance; (8)Flat gain over frequency band.

Diagrams

bgf1801-10 Test circuit