(Hong Kong)
Product Summary
The blf177c is a Silicon N-channel enhancement mode vertical D-MOS transistor. It is designed for SSB transmitter applications in the HF frequency range. The blf177c is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.
Parametrics
blf177c absolute maximum ratings: (1)drain-source voltage:65V; (2)gate-source voltage:±20V; (3)drain current (DC):6A; (4)total power dissipation Tmb≤25℃:68W; (5)storage temperature:-65℃ to 150℃; (6)junction temperature:200℃.
Features
blf177c features: (1)High power gain; (2)Low noise figure; (3)Good thermal stability; (4)Withstands full load mismatch.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLF177C |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
|
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|
BLF177C,112 |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
|
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|
BLF177CR |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
|
||||
|
BLF177CR,112 |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
|
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