Product Summary

The blf245 is a Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor blf245 is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.

Parametrics

blf245 absolute maximum ratings: (1)VDS, drain-source voltage VGS =0: 65 V; (2)±VGS, gate-source voltage VDS =0: 20 V; (3)ID, DC drain current: 6A; (4)Ptot, total power dissipation up to Tmb = 25℃: 68 W; (5)Tstg, storage temperature: -65 to 150℃; (6)Tj,junction temperature: 200℃.

Features

blf245 features: (1)High power gain; (2)Low noise figure; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.

Diagrams

blf245 pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF245
BLF245
Advanced Semiconductor, Inc.
Transistors RF MOSFET Power RF Transistor
Data Sheet
0-20: $27.00
20-25: $24.30
25-50: $21.60
50-100: $19.44
BLF245,112
BLF245,112
NXP Semiconductors
Transistors RF MOSFET Power RF DMOS 30W VHF
Data Sheet
0-1: $22.26
1-25: $20.77
25-100: $19.28
100-250: $18.91
BLF245B
BLF245B
Other

Data Sheet
Negotiable 
BLF245B,112
BLF245B,112
NXP Semiconductors
Transistors RF MOSFET Power RF DMOS 30W VHF P-P
Data Sheet
0-1: $42.27
1-25: $39.83
25-100: $36.98