Product Summary
The blf642 is a broadband power LDMOS transistor. The blf642 is for broadcast transmitter and industrial applications. The blf642 transistor is suitable for the frequency range HF to 1400MHz. Applications of the blf642 include: Communication transmitter applications in the HF to 1400MHz frequency range and Industrial applications in the HF to 1400MHz frequency range.
Parametrics
blf642 absolute maximum ratings: (1) drain-source voltage VDS: 65V; (2) gate-source voltage VGS: -0.5 to +11V; (3) storage temperature Tstg: -65 to +150°C; (4) junction temperature Tj: 200°C.
Features
blf642 features: (1) CW performance at 1300 MHz, a drain-source voltage VDS of 32V and a quiescent drain current IDq=0.2A; (2) 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32V and a quiescent drain current IDq=0.2A; (3) Integrated ESD protection; (4) Excellent ruggedness; (5) High power gain; (6) High efficiency; (7) Excellent reliability; (8) Easy power control; (9) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) .
Diagrams
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![]() BLF642,112 |
![]() NXP Semiconductors |
![]() Transistors RF MOSFET Power LDMOS TRANSISTOR |
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Image | Part No | Mfg | Description | ![]() |
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![]() BLF642,112 |
![]() NXP Semiconductors |
![]() Transistors RF MOSFET Power LDMOS TRANSISTOR |
![]() Data Sheet |
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![]() BLF645,112 |
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![]() Transistors RF MOSFET Power TRANSISTOR PWR LDMOS |
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![]() BLF647 |
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![]() BLF647,112 |
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![]() Transistors RF MOSFET Power RF LDMOS 150W UHF |
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![]() BLF647A |
![]() NXP Semiconductors |
![]() Transistors RF MOSFET Power LDMOS TNS |
![]() Data Sheet |
![]() Negotiable |
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![]() BLF647A,112 |
![]() NXP Semiconductors |
![]() Transistors RF MOSFET Power LDMOS TNS |
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