Product Summary

The BLF6G10-135RN is a 135 W LDMOS power transistor.The BLF6G10-135RN for base station applications at frequencies from 700 MHz to 1000 MHz. Application is RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range.

Parametrics

BLF6G10-135RN absolute maximum ratings: (1)Drain-source voltage: 65 V; (2)Gate-source voltage: −0.5 +13 V; (3)Drain current: 32 A; (4)Storage temperature: −65 +150 °C; (5)Junction temperature: 225 °C.

Features

BLF6G10-135RN features: (1)Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: Average output power = 26.5 W; Power gain = 21.0 dB; Efficiency = 28.0 %; ACPR = −39 dBc; (2)Easy power control; (3)Integrated ESD protection; (4)Enhanced ruggedness; (5)High efficiency; (6)Excellent thermal stability; (7)Designed for broadband operation (700 MHz to 1000 MHz); (8)Internally matched for ease of use; (9)Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS).

Diagrams

BLF6G10-135RN pin connection

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