BLF6G10LS-135R

blf6g10ls-135r, LDMOS power transistor, 135 W, 700 MHz, 65 V, 32 A, SMD

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Price:: US $21.31~72.45 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	72.45 / Piece
101 ~ 1000 :	42.62 / Piece
1001 ~ 2000 :	21.31 / Piece

PartNumber:: BLF6G10LS-135R

Brand:: NXP Semiconductors - nxp | Pack: | D/C: 06+

Availability:: Supply Ability: 2000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-25

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Part Number:BLF6G10LS-135R
US $21.31 - 72.45
Quantity:

piece

Product Summary

The blf6g10ls-135r is a 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Application of the blf6g10ls-135r is RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range.

Parametrics

blf6g10ls-135r absolute maximum ratings: (1)Drain-source voltage: 65 V; (2)Gate-source voltage: -0.5 to +13 V; (3)Drain current: 32 A; (4)Storage temperature: -65 to +150 °C; (5)Junction temperature: 225 °C.

Features

blf6g10ls-135r features: (1)Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: Average output power = 26.5 W; Power gain = 21.0 dB; Efficiency = 28.0 %; ACPR = −39 dBc; (2)Easy power control; (3)Integrated ESD protection; (4)Enhanced ruggedness; (5)High efficiency; (6)Excellent thermal stability; (7)Designed for broadband operation (700 MHz to 1000 MHz); (8)Internally matched for ease of use; (9)Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS).