(Hong Kong)
Product Summary
The blf6g20ls-110 is a power LDMOS transistor. The 180W blf6g20ls-110 LDMOS power transistor for base station applications at frequencies from 1800MHz to 2000MHz. Applications of the blf6g20ls-110 include: RF power amplifiers for W-CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency range.
Parametrics
blf6g20ls-110 absolute maximum ratings: (1) drain-source voltage VDS: 65V; (2) gate-source voltage: -0.5 to 13V; (3) storage temperature Tstg: -65 to +150°C; (4) case temperature Tcas: 150°C; (5) junction temperature Tj: 225°C.
Features
blf6g20ls-110 features: (1) Typical 2-carrier W-CDMA performance at frequencies of 1805MHz and 1880MHz, a supply voltage of 32V and an IDq if 1600mA; (2) Average output power=50W; (3) Power gain=50W; (4) Effciency=29.5%; (5) ACPR=-35dBc; (6) Easy power control; (7) Integrated ESD protection; (8) Excellent ruggedness; (9) High efficiency; (10) Excellent thermal stability; (11) Designed for broadband operation (1800 MHz to 2000 MHz) ; (12) Internally matched for ease of use; (13) Qualified up to a supply voltage of 32V; (14) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLF6G20LS-110 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
|
||||||||
|
BLF6G20LS-110 /T3 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
|
||||||||
 |
BLF6G20LS-110,118 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
|
|
||||||||
|
BLF6G20LS-110,112 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
|
|
||||||||
