(Hong Kong)
Product Summary
The blf7g27ls-90p is a 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. The application of it is RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range.
Parametrics
blf7g27ls-90p absolute maximum ratings: (1)drain-source voltage: - 65 V; (2)gate-source voltage: -0.5 to +13 V; (3)drain current: - 37 A; (4)storage temperature: -65 to +150°C; (5)junction temperature - 225°C.
Features
blf7g27ls-90p features: (1)Excellent ruggedness; (2)High efficiency; (3)Low Rth providing excellent thermal stability; (4)Designed for broadband operation (2500 MHz to 2700 MHz); (5)Lower output capacitance for improved performance in Doherty applications; (6)Designed for low memory effects providing excellent pre-distortability; (7)Internally matched for ease of use; (8)Integrated ESD protection; (9)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).
Diagrams
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 BLF7G27LS-90P,112 |
NXP Semiconductors |
Transistors RF MOSFET Power PWR LDMOS TRANSISTOR |
Data Sheet |
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BLF7G27LS-90P,118 |
NXP Semiconductors |
Transistors RF MOSFET Power PWR LDMOS TRANSISTOR |
Data Sheet |
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