(Hong Kong)
Product Summary
The flm8596-12f is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Parametrics
flm8596-12f absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 57.6 W; (4)Storage Temperature: -65 to +175 °C; (5)Channel Temperature: 175 °C.
Features
flm8596-12f features: (1)High Output Power: P1dB = 40.5 dBm (Typ.); (2)High Gain: G1dB = 7.5 dB (Typ.); (3)High PAE: ηadd = 25 % (Typ.); (4)IM3 = -46dBc@Po = 29.5dBm; (5)Broad Band: 12.7 ~ 9.6GHz; (6)Impedance Matched Zin/Zout = 50Ω; (7)Hermetically Sealed.
Diagrams
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 FLM8596-12F |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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FLM8596-12F |
Other |
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Data Sheet |
Negotiable |
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FLM8596-15F |
Other |
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Data Sheet |
Negotiable |
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FLM8596-4F |
Other |
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Data Sheet |
Negotiable |
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FLM8596-8F |
Other |
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Data Sheet |
Negotiable |
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