Product Summary

The mrf1090ma is a RF MOSFET. Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.

Parametrics

mrf1090ma absolute maximum ratings: (1)Drain-source voltage, VDSS: 65V; (2)Gate-source voltage, VGS: ±40V; (3)Drain current-continous, ID: 13A; (4)Total device disspation, PD: 270W; (5)Storage temperature range, TSTG: -65 to +150℃; (6)Operating junction temperature, TJ: 200℃.

Features

mrf1090ma features: (1)Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W; Minimum gain = 9.0 dB; (2)Efficiency = 50% (min.); (3)Excellent thermal stability, ideally suited for Class A operation; (4)Facilitates manual gain control, ALC and modulation techniques; (5)100% tested for load mismatch at all phase angles with 30:1 VSWR; (6)Low noise figure - 3.0 dB typ. at 2.0 A, 150 MHz.

Diagrams

mrf1090ma block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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MRF1090MA
MRF1090MA

Other


Data Sheet

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MRF1.6/5.6
MRF1.6/5.6

Other


Data Sheet

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MRF1.6/5.6-AP-2.5C
MRF1.6/5.6-AP-2.5C

Hirose Connector

RF Connectors Obsolete

Data Sheet

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MRF1.6/5.6-AP-59U
MRF1.6/5.6-AP-59U

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-BCUPA
MRF1.6/5.6-BCUPA

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-LPJ-179U
MRF1.6/5.6-LPJ-179U

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-LR-PC-1
MRF1.6/5.6-LR-PC-1

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable