Product Summary

The mrf166c is an N-Channel Enhancement-Mode MOSFET designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of the mrf166c makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Parametrics

mrf166c maximum ratings: (1)Drain Source Voltage VDSS: 125 Vdc; (2)Drain–Gate Voltage VDGO: 125 Vdc; (3)Gate Source Voltage VGS: ±40 Vdc; (4)Drain Current Continuous ID: 40 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 500 Watts; (6)Derate above 25℃: 2.85 W/℃; (7)Storage Temperature Range Tstg: -65 to +150 ℃; (8)Operating Junction Temperature TJ: 200 ℃.

Features

mrf166c features: (1)Guaranteed Performance at 175 MHz, 50 V: Output Power 300 W; Gain 14 dB (16 dB Typ); Efficiency 50%; (2)Low Thermal Resistance 0.35℃/W; (3)Ruggedness Tested at Rated Output Power; (4)Nitride Passivated Die for Enhanced Reliability.

Diagrams

mrf166c circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF166C
MRF166C
M/A-COM Technology Solutions
Transistors RF MOSFET Power 5-500MHz 20Watts 28Volt Gain 13.5dB
Data Sheet
0-1: $27.73
1-10: $26.18
10-25: $24.64
25-50: $23.87
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF1.6/5.6
MRF1.6/5.6
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Hirose Connector
RF Connectors Obsolete
Data Sheet
Negotiable