Product Summary

The mrf18090as is a lateral n-channel broadband rf power MOSFET. The mrf18090as is designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of the mrf18090as makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment.

Parametrics

mrf18090as absolute maximum ratings: (1)Drain–Source Voltage VDSS: 65 Vdc; (2)Gate–Source Voltage VGS: ±20 Vdc; (3)Drain Current Continuous ID: 7 Adc; (4)Total Device Dissipation @ TC = 70℃ PD: 118Watts; (5)Derate above 70℃: 0.9W/℃; (6)Storage Temperature Range Tstg: – 65 to +150 ℃; (7)Operating Junction Temperature TJ: 200 ℃.

Features

mrf18090as features: (1)Guaranteed Performance @ 945 MHz, 28 Volts. Output Power = 60 Watts. Power Gain = 11.5 dB. Efficiency = 53%; (2)Characterized with Series Equivalent Large Lignal Impedance Parameters; (3)S-Parameter Characterization at High Bias Levels; (4)Excellent Thermal Stability; (5)Capable of Handling 30:1 VSWR @ 28 Vdc, 945 MHz.

Diagrams

mrf18090as Test Circuit Schematic

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MRF18090AS
MRF18090AS

Other


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MRF1.6/5.6
MRF1.6/5.6

Other


Data Sheet

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MRF1.6/5.6-AP-2.5C
MRF1.6/5.6-AP-2.5C

Hirose Connector

RF Connectors Obsolete

Data Sheet

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MRF1.6/5.6-AP-59U
MRF1.6/5.6-AP-59U

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-BCUPA
MRF1.6/5.6-BCUPA

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-LPJ-179U
MRF1.6/5.6-LPJ-179U

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable 
MRF1.6/5.6-LR-PC-1
MRF1.6/5.6-LR-PC-1

Hirose Connector

RF Connectors Obsolete

Data Sheet

Negotiable