(Hong Kong)
Product Summary
The mrf19090 is an N-Channel Enhancement-Mode Lateral MOSFET designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications.
Parametrics
mrf19090 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: -0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25°C, PD: 270W; 1.54W/°C Derate above 25°C; (4)Storage Temperature Range Tstg: -65 to +150 °C; (5)Case Operating Temperature TC: 150 °C; (6)Operating Junction Temperature TJ: 200 °C.
Features
mrf19090 features: (1)Internally Matched for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Excellent Thermal Stability; (6)Characterized with Series Equivalent Large-Signal Impedance Parameters; (7)RoHS Compliant; (8)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 MRF19090 |
Other |
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Data Sheet |
Negotiable |
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MRF19090S |
Other |
|
Data Sheet |
Negotiable |
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MRF19090SR3 |
|
IC MOSFET RF N-CHAN NI-880S |
Data Sheet |
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MRF19090SRS |
Other |
|
Data Sheet |
Negotiable |
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