(Hong Kong)
Product Summary
The mrf21030lr3 is a RF Power Field Effect Transistor designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. The mrf21030lr3 is suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
Parametrics
mrf21030lr3 absolute maximum ratings: (1)Drain-Source Voltage VDSS: 65 Vdc; (2)Gate-Source Voltage VGS: -0.5, +15 Vdc; (3)Total Device Dissipation, PD: 83.3 W/℃; (4)Storage Temperature Range Tstg: - 65 to +150℃; (5)Operating Junction Temperature TJ: 200℃.
Features
mrf21030lr3 features: (1)Wideband CDMA Performance: -45 dB ACPR @ 4.096 MHz, 28 Volts Output Power ó 3.5 Watts Power Gain ó 14 dB Efficiency ó 15%; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW Output Power; (6)Excellent Thermal Stability; (7)Characterized with Series Equivalent Large-Signal Impedance Parameters; (8)Low Gold Plating Thickness on Leads, 40μ" Nominal; (9)In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MRF21030LR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power 30W 2.2GHZ LDMOS NI400L |
Data Sheet |
Negotiable |
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MRF20030 |
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MRF20060R |
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MRF20060RS |
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Data Sheet |
Negotiable |
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