Product Summary

The mrf21060l is an N-Channel Enhancement -Mode Lateral MOSFET. Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W-CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.

Parametrics

mrf21060l absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage, VGS: -0.5, +15 Vdc; (3)Total Device Dissipation, PD: 180W @ TC = 25°C; 0.98W/°C; (4)Derate above 25°C; (5)Storage Temperature Range, Tstg: - 65 to +150 °C; (6)Case Operating Temperature, TC: 150 °C; (7)Operating Junction Temperature, TJ: 200 °C.

Features

mrf21060l features: (1)Internally Matched for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Excellent Thermal Stability; (6)Characterized with Series Equivalent Large-Signal Impedance Parameters; (7)Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ Nominal; (8)RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

Diagrams

mrf21060l block diagram