Product Summary

The mrf313 is an NPN Silicon High-Frequency Transistor. It is designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio

Parametrics

mrf313 absolute maximum ratings: (1)Collector–Emitter Voltage: 30Vdc; (2)Collector–Base Voltage: 40Vdc; (3)Emitter–Base Voltage: 3.0Vdc; (4)Collector Current — Continuous: 150mAdc; (5)Total Device Dissipation: TC = 25°C: 6.1W, Derate above 25°C: 35mW/°C; (6)Storage Temperature Range: –65 to +150°C.

Features

mrf313 features: (1)Specified 28 Volt, 400 MHz Characteristics: Output Power = 1.0 Watt, Power Gain = 15 dB Min, Efficiency = 45% Typ; (2)Emitter Ballast and Low Current Density for Improved MTBF; (3)Common Emitter for Improved Stability.

Diagrams

mrf313 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF313
MRF313

Advanced Semiconductor, Inc.

Transistors RF Bipolar Small Signal RF Transistor

Data Sheet

0-1: $27.00
1-10: $22.50
10-25: $20.25
25-50: $18.00
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF3010
MRF3010

Other


Data Sheet

Negotiable 
MRF3094
MRF3094

Other


Data Sheet

Negotiable 
MRF3095
MRF3095

Other


Data Sheet

Negotiable 
MRF3104
MRF3104

Other


Data Sheet

Negotiable 
MRF3105
MRF3105

Other


Data Sheet

Negotiable 
MRF3106
MRF3106

Other


Data Sheet

Negotiable