Product Summary
The mrf455 is an NPN silicon rf power transistor. It is designed for power amplifier applications industrial, commercial and amateur radio equipment to 30MHz.
Parametrics
mrf455 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 20 Vdc; (2)Collector–Base Voltage VCBO: 40 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 7.5 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 115 Watts, Derate above 25℃: 0.66 W/℃; (6)Storage Temperature Range Tstg: – 65 to +150 ℃.
Features
mrf455 features: (1)Specified 12.5 Volts, 30MHz characteristics: output power=50 Watts, Minimum gain=11 dB, Efficiency=50%.
Diagrams
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MRF455 |
M/A-COM Technology Solutions |
Transistors RF Bipolar Power 2-30MHz 60Watts 12.5Volt Gain 13dB |
Data Sheet |
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