(Hong Kong)
Product Summary
The mrf517 is an NPN silicon rf power transistor designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment.
Parametrics
mrf517 absolute maximum ratings: (1)IC: 2.0 A; (2)VCBO: 60 V; (3)VCEO: 33 V; (4)VEBO: 4.0 V; (5)PDISS: 30 W @ TC = 25℃; (6)TJ: -65 to +200℃; (7)TSTG: -65 to +150℃; (8)θJC: 6.0℃/W.
Features
mrf517 features: (1)PG = 10 dB Typical at 400 MHz; (2)Economical.280" Stud Package; (3)Omnigold Metalization System.
Diagrams
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 MRF517 |
Other |
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Data Sheet |
Negotiable |
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MRF5174 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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MRF5176 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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