Product Summary

THe mrf5711lt1 is a high frenquency transistor. Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This Motorola series of small–signal plastic transistors offers superior quality and performance at low cost.

Parametrics

mrf5711lt1 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 10 Vdc; (2)Collector–Base Voltage VCBO: 20 Vdc; (3)Emitter–Base Voltage VEBO: 3.0 Vdc; (4)Collector Current — Continuous IC: 80 mA; (5)Total Device Dissipation PD(max): 0.33W @ Tcase = 75°C; 4.44 mW/°C Derate linearly above Tcase = 75°C; (6)Operating and Storage Temperature Tstg: –55 to +150 °C.

Features

mrf5711lt1 features: (1)High Gain–Bandwidth Product fT = 8.0 GHz (Typ) @ 50 mA; (2)Low Noise Figure NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571); (3)High Gain GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1); (4)High Power Gain Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1); (5)State–of–the–Art Technology: Fine Line Geometry; Ion–Implanted Arsenic Emitters; Gold Top Metallization and Wires; Silicon Nitride Passivation; (6)Available in tape and reel packaging options: T1 suffix = 3,000 units per reel.

Diagrams

mrf5711lt1 block diagram

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