Product Summary

The mrf581a is a RF & microwave discrete low power transistor. Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Parametrics

mrf581a absolute maximum ratings: (1)VCEO Collector-Emitter Voltage 15 Vdc; (2)VCBO Collector-Base Voltage 30 Vdc; (3)VEBO Emitter-Base Voltage 2.5 Vdc; (4)IC Collector Current 200 mA.

Features

mrf581a features: (1)Low Noise - 2.5 dB @ 500 MHZ; (2)Associated Gain = 15.5 dB @ 500 MHz; (3)Ftau - 5.0 GHz @ 10v, 75mA; (4)Cost Effective SO-8 package.

Diagrams

mrf581a block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF581A
MRF581A
Advanced Semiconductor, Inc.
Transistors RF Bipolar Small Signal RF Transistor
Data Sheet
0-1: $1.35
1-10: $1.13
10-25: $1.01
25-50: $0.90
MRF581AG
MRF581AG

TRANS RF NPN 5GHZ 15V MACR0 X
Data Sheet
0-1: $1.78
1-10: $1.61
10-25: $1.44
25-100: $1.29
100-250: $1.15
250-500: $1.01
500-1000: $0.83
1000-2500: $0.78
2500-5000: $0.75