Product Summary

The mrf6401 is a RF power transistor. The mrf6401 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz.

Parametrics

mrf6401 absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 24 Vdc; (2)Collector–Emitter Voltage, VCES: 60 Vdc; (3)Emitter–Base Voltage, VEBO: 4 Vdc; (4)Collector–Current — Continuous, IC: 10 Adc; (5)Total Device Dissipation, PD: 125W @ TC = 25°C; 0.71W/°C Derate above 25°C; (6)Storage Temperature Range, Tstg: –65 to +150 °C; (7)Operating Junction Temperature, TJ: 200 °C.

Features

mrf6401 features: (1)Specified 26 Volts, 1.88 GHz Characteristics: Output Power — 30 Watts; Gain — 7.5 dB Min @ 30 Watts; Efficiency — 38% Min @ 30 Watts; (2)Characterized with Series Equivalent Large–Signal Parameters from 1.8 to 2.0 GHz; (3)To be used in Class AB for DCS1800 and PCS1900/Cellular Radio; (4)Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration.

Diagrams

mrf6401 block diagram