Product Summary

The mrf6s9125n is an N-Channel Enhancement -Mode Lateral MOSFET. Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

Parametrics

mrf6s9125n absolute maximum ratings: (1)Drain-Source Voltage VDSS -0.5, +68 Vdc; (2)Gate-Source Voltage VGS -0.5, +12 Vdc; (3)Storage Temperature Range Tstg - 65 to +150 °C; (4)Case Operating Temperature TC 150 °C; (5)Operating Junction Temperature TJ 225 °C.

Features

mrf6s9125n features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)225°C Capable Plastic Package; (6)N Suffix Indicates Lead-Free Terminations. RoHS Compliant; (7)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Diagrams

mrf6s9125n lbock diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF6S9125NBR1
MRF6S9125NBR1

MOSFET RF N-CH 28V 27W TO-272-4
Data Sheet
0-500: $22.62
MRF6S9125NR1
MRF6S9125NR1

MOSFET RF N-CH 28V 27W TO-270-4
Data Sheet
Negotiable