Product Summary

The mrf7s21110hs is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

Parametrics

mrf7s21110hs absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage, VGS: -6.0, +10 Vdc; (3)Operating Voltage, VDD: 32, +0 Vdc; (4)Storage Temperature Range, Tstg: -65 to +150 °C; (5)Case Operating Temperature, TC: 150 °C; (6)Operating Junction Temperature, TJ: 225 °C.

Features

mrf7s21110hs features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)Internally Matched for Ease of Use; (4)Integrated ESD Protection; (5)Greater Negative Gate-Source Voltage Range for Improved Class C Operation; (6)Designed for Digital Predistortion Error Correction Systems; (7)RoHS Compliant; (8)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

mrf7s21110hs block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF7S21110HSR3
MRF7S21110HSR3
Freescale Semiconductor
Transistors RF MOSFET Power HV7 33W WCDMA NI780HS
Data Sheet
0-188: $31.31
188-250: $31.31
MRF7S21110HSR5
MRF7S21110HSR5
Freescale Semiconductor
Transistors RF MOSFET Power HV7 33W WCDMA NI780HS
Data Sheet
Negotiable