(Hong Kong)
Product Summary
The MRF8372 is an NPN silicon RF low power transisitor designed primerilyfor wideband large signal predriverstages in 800 MHz and UHF frequencyranges.
Parametrics
MRF8372 absolute maximum ratings: (1)IC: 200 mA; (2)VCBO: 36 V; (3)PDISS: 1.0 W @ TC = 25 °C; (4)TJ: -65 °C to +150 °C; (5)TSTG: -65 °C to +150 °C; (6)θθθθJC: 40 °C/W.
Features
MRF8372 features: (1)Min gain 8.0 dB @ 750 mW/870 MHz; (2)Silicon Nitride passivated; (3)Low cost Plastic Package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF8372LF |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
|
|
||||||||||||
|
MRF8372LFR1 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
|
||||||||||||
|
MRF8372LFR2 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
|
||||||||||||
