Product Summary

The mrf891 is an NPN silicon RF power transisitor designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in therange of 800 – 960 MHz.

Parametrics

mrf891 absolute maximum ratings: (1)Collector–Emitter Voltage: VCEO 30 Vdc; (2)Collector–Base Voltage: VCBO 55 Vdc ; (3)Emitter–Base Voltage: VEBO 4 Vdc; (4)Total Device Dissipation @ TC = 70°C: PD 34 Watt Derate above 70°C 0.24 W/°C.

Features

mrf891 features: (1)Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics; (2)Output Power = 6.5 Watts CW; (3)Minimum Power Gain = 11.5 dB; (4)Minimum ITO = + 47 dBm; (5)Typical Noise Figure = 6 dB; (6)Characterized with Small–Signal S–Parameters and Series EquivalentLarge–Signal Parameters from 800– 960 MHz; (7)Silicon Nitride Passivated; (8)100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.9 Adc and Rated Output Power; (9)Will Withstand RF Input Overdrive of 2 W CW; (10)Gold Metallized, Emitter Ballasted for Long Life and Resistance to MetalMigration; (11)Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Diagrams

mrf891 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF891
MRF891
Other

Data Sheet
Negotiable 
MRF891S
MRF891S
Other

Data Sheet
Negotiable