Product Summary

The mrfe6s9125n is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of the mrfe6s9125n make it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

Parametrics

mrfe6s9125n absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +66 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Maximum Operation Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (1,2) TJ: 225 ℃.

Features

mrfe6s9125n features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Integrated ESD Protection; (4)225℃ Capable Plastic Package; (5)RoHS Compliant; (6)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Diagrams

mrfe6s9125n test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRFE6S9125NBR1
MRFE6S9125NBR1
Freescale Semiconductor
Transistors RF MOSFET Power HV6E 125W
Data Sheet
0-271: $25.46
271-500: $18.36
MRFE6S9125NR1
MRFE6S9125NR1
Freescale Semiconductor
Transistors RF MOSFET Power HV6E 125W
Data Sheet
0-1: $32.09
1-10: $29.83
10-25: $28.34
25-100: $18.48