Product Summary
The ixtn21n100 is a High Voltage MegaMOSTMFET. The applications of it are DC-DC converters, Synchronous rectification, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, Temperature and lighting controls.
Parametrics
ixtn21n100 absolute maximum ratings: (1)VDSS TJ = 25°C to 150°C: 1000 V; (2)VDGR TJ = 25°C to 150°C; RGS = 1 MΩ: 1000 V; (3)VGS Continuous: ±20 V; (4)VGSM Transient: ±30 V; (5)ID25 TC = 25°C, Chip capability: 21 A; (6)IDM TC = 25°C, pulse width limited by TJM: 84 A; (7)PD TC = 25°C: 520 W; (8)TJ: -55 to +150 °C; (9)TJM: 150 °C; (10)Tstg: -55 to +150 °C.
Features
ixtn21n100 features: (1)International standard packages; (2)JEDEC TO-264, epoxy meet UL 94 V-0 flammability classification; (3)miniBLOC, (ISOTOP-compatible)with Aluminium nitride isolation; (4)Low RDS (on)HDMOSTM process Rugged polysilicon gate cell structure; (5)Low package inductance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
---|---|---|---|---|---|---|---|---|---|---|
IXTN21N100 |
Ixys |
MOSFET 21 Amps 100V 0.55 Ohm Rds |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
IXTN200N10L2 |
Ixys |
MOSFET |
Data Sheet |
Negotiable |
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IXTN21N100 |
Ixys |
MOSFET 21 Amps 100V 0.55 Ohm Rds |
Data Sheet |
Negotiable |
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IXTN22N100L |
Ixys |
MOSFET 22 Amps 1000V |
Data Sheet |
Negotiable |
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IXTN60N50L2 |
Ixys |
MOSFET 60 Amps 500V |
Data Sheet |
Negotiable |
|
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IXTN62N50L |
Ixys |
MOSFET 62 Amps 500V |
Data Sheet |
Negotiable |
|
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IXTN550N055T2 |
Ixys |
Power Driver ICs GigaMOS Trench T2 HiperFET PWR MOSFET |
Data Sheet |
Negotiable |
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