Product Summary

The ixtn21n100 is a High Voltage MegaMOSTMFET. The applications of it are DC-DC converters, Synchronous rectification, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, Temperature and lighting controls.

Parametrics

ixtn21n100 absolute maximum ratings: (1)VDSS TJ = 25°C to 150°C: 1000 V; (2)VDGR TJ = 25°C to 150°C; RGS = 1 MΩ: 1000 V; (3)VGS Continuous: ±20 V; (4)VGSM Transient: ±30 V; (5)ID25 TC = 25°C, Chip capability: 21 A; (6)IDM TC = 25°C, pulse width limited by TJM: 84 A; (7)PD TC = 25°C: 520 W; (8)TJ: -55 to +150 °C; (9)TJM: 150 °C; (10)Tstg: -55 to +150 °C.

Features

ixtn21n100 features: (1)International standard packages; (2)JEDEC TO-264, epoxy meet UL 94 V-0 flammability classification; (3)miniBLOC, (ISOTOP-compatible)with Aluminium nitride isolation; (4)Low RDS (on)HDMOSTM process Rugged polysilicon gate cell structure; (5)Low package inductance.

Diagrams

ixtn21n100 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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Quantity
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Ixys

MOSFET 21 Amps 100V 0.55 Ohm Rds

Data Sheet

Negotiable 
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