Product Summary

The mg50j2ys40 is a silicon N channel IGBT.

Parametrics

mg50j2ys40 absolute maximum ratings: (1)Collector-emitter voltage: 600V; (2)Gate-emitter voltage: ±20V; (3)Collector current: 50A; (4)Forward current: 50A; (5)Collector power dissipation: 280W; (6)Junction temperature: 150℃.

Features

mg50j2ys40 features: (1)The electrodes are isolated from case;(2)High input impedance; (3)includes a complete half bridge in one package; (4)enhancement mode; (5)high speed; (6)Low saturation voltage.

Diagrams

mg50j2ys40 diagram