Product Summary

The mrf141g is a RF Power FET. It is designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of the mrf141g is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.

Parametrics

mrf141g absolute maximum ratings: (1)drain-source voltage: 65 V; (2)drain-gate voltage: 65 V; (3)gate-source voltage: ±40 V; (4)drain current-continuous: 32 A; (5)total device dissipation @ Tc=25℃: 500 W, derate above 25℃: 2.85 W/℃; (6)storage temperature range: -65 to +150 ℃; (7)operating junction temperature: 200 ℃

Features

mrf141g features: (1)Guaranteed performance at 175MHz, 28V: Output power: 300W, Gain: 12dB (14dB Typ.), Efficiency: 50%; (2)Low thermal resistance: 0.35℃/W; (3)Ruggedness tested at rated output power; (4)Nitride passivated die for enhanced reliability.

Diagrams

mrf141g pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF141G
MRF141G
M/A-COM Technology Solutions
Transistors RF MOSFET Power 5-175MHz 300Watts 28Volt Gain 12dB
Data Sheet
0-1: $113.36
1-10: $109.58
10-25: $105.80
25-50: $102.03
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF1.6/5.6
MRF1.6/5.6
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MRF1.6/5.6-LPJ-179U
MRF1.6/5.6-LPJ-179U
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Data Sheet
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MRF1.6/5.6-LR-PC-1
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Hirose Connector
RF Connectors Obsolete
Data Sheet
Negotiable