(Hong Kong)
Product Summary
The tim1112-2l is a microwave power GaAs FET.
Parametrics
tim1112-2l absolute maximum ratings: (1)Drain-Source Voltage VDS: 15V; (2)Gate-Source Voltage VGS: -5V; (3) Drain Current IDS: 2.6A; (4)Total Power Dissipation (Tc= 25 °C)PT: 15W; (5)Channel Temperature Tch: 175°C; (6)Storage Temperature Tstg: -65 to +175°C.
Features
tim1112-2l features: (1)high gain: G1dB=7.5 dB at 11.7 GHz to 12.7 GHz; (3)high power: P1dB=33.5 dBm at 11.7 GHz to 12.7 GHz; (4)broad band internally matched fet; (5)hermetically sealed package.
Diagrams
