Product Summary

The tim4450-4d is a microwave power GaAs FET.

Parametrics

tim4450-4d absolute maximum ratings: (1)Drain-Source Voltage, VDS: 15V; (2)Gate-Source Voltage, VGS: -5V; (3)Drain Current, IDS: 3.5A; (4)Total Power Dissipation, PT: 25℃; (5)Channel Temperature Tch: 175℃; (6)Storage, Tstg: -65 to +175℃.

Features

tim4450-4d features: (1)high power: P1dB=36.5dBm at 4.4GHz to 5.0GHz; (2)broad band internally matched FET; (3)high gain: G1dB=11.0dB at 4.4GHz to 5.0GHz; (4)hermetically sealed package.

Diagrams

tim4450-4d dimensions