(Hong Kong)
Product Summary
The EDE5108AJBG-6E-E is a 512M bits DDR2 SDRAM.
Parametrics
EDE5108AJBG-6E-E absolute maximum ratings: (1)Power supply voltage VDD: -1.0 to +2.3 V; (2)Power supply voltage for output VDDQ: -0.5 to +2.3 V; (3)Input voltage VIN: -0.5 to +2.3 V; (4)Output voltage VOUT: -0.5 to +2.3 V; (5)Storage temperature Tstg: -55 to +100℃; (6)Power dissipation PD: 1.0 W; (7)Short circuit output current IOUT: 50 mA.
Features
EDE5108AJBG-6E-E features: (1)Double-data-rate architecture; two data transfers per clock cycle; (2)The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture; (3)Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver; (4)DQS is edge-aligned with data for READs; center-aligned with data for WRITEs; (5)Differential clock inputs (CK and /CK); (6)DLL aligns DQ and DQS transitions with CK transitions; (7)Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS; (8)Data mask (DM) for write data; (9)Posted /CAS by programmable additive latency for better command and data bus efficiency; (10)Off-Chip-Driver Impedance Adjustment and On-Die-Termination for better signal quality.
Diagrams
 |
 EDE5132AABG |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
EDE5116GBSA |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
EDE5116AJBG |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
EDE5116AFSE |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
EDE5116ABSE |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
EDE5108GBSA |
Other |
|
Data Sheet |
Negotiable |
|
||||
