Product Summary

The IS61C6416-10TL is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using high-performance CMOS technology of ISSI. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption.

Parametrics

IS61C6416-10TL absolute maximum ratings: (1)VTERM Terminal Voltage with Respect to GND: –0.5 to +7.0 V; (2)TSTG Storage Temperature: –65 to +150 ℃; (3)PT Power Dissipation: 1.5 W; (4)IOUT DC Output Current (LOW): 20 mA.

Features

IS61C6416-10TL features: (1)High-speed access time: 12 ns, 15ns; (2)Low Active Power: 175 mW (typical); (3)Low Standby Power: 1 mW (typical) CMOS standby; (4)TTL compatible interface levels; (5)Single 5V ±10% power supply; (6)Fully static operation: no clock or refresh required; (7)Available in 44-pin SOJ package and 44-pin TSOP (Type II); (8)Commercial, Industrial and Automotive temperature ranges available; (9)Lead-free available.

Diagrams

IS61C6416-10TL block diagram

IS61(64)LF12832A
IS61(64)LF12832A

Other


Data Sheet

Negotiable 
IS61(64)LF12836A
IS61(64)LF12836A

Other


Data Sheet

Negotiable 
IS61(64)LF25618A
IS61(64)LF25618A

Other


Data Sheet

Negotiable 
IS61(64)LPS12832A
IS61(64)LPS12832A

Other


Data Sheet

Negotiable 
IS61(64)LPS12836A
IS61(64)LPS12836A

Other


Data Sheet

Negotiable 
IS61(64)LPS25618A
IS61(64)LPS25618A

Other


Data Sheet

Negotiable