Product Summary
The IS61C6416-10TL is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using high-performance CMOS technology of ISSI. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption.
Parametrics
IS61C6416-10TL absolute maximum ratings: (1)VTERM Terminal Voltage with Respect to GND: –0.5 to +7.0 V; (2)TSTG Storage Temperature: –65 to +150 ℃; (3)PT Power Dissipation: 1.5 W; (4)IOUT DC Output Current (LOW): 20 mA.
Features
IS61C6416-10TL features: (1)High-speed access time: 12 ns, 15ns; (2)Low Active Power: 175 mW (typical); (3)Low Standby Power: 1 mW (typical) CMOS standby; (4)TTL compatible interface levels; (5)Single 5V ±10% power supply; (6)Fully static operation: no clock or refresh required; (7)Available in 44-pin SOJ package and 44-pin TSOP (Type II); (8)Commercial, Industrial and Automotive temperature ranges available; (9)Lead-free available.
Diagrams
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![]() IS61(64)LF12832A |
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![]() IS61(64)LF12836A |
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![]() IS61(64)LF25618A |
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![]() IS61(64)LPS12832A |
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![]() IS61(64)LPS12836A |
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![]() IS61(64)LPS25618A |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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