(Hong Kong)
Product Summary
The SI4818DY-T1-E3 is a Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode.
Parametrics
SI4818DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS 30V; (2)Gate-Source Voltage VGS 20V; (3)Continuous Drain Current, ID: 6.3A; (4)Pulsed Drain Current IDM: 30A; (5)Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150℃.
Features
SI4818DY-T1-E3 features: (1)FET Type 2 N-Channel (Dual); (2)FET Feature Logic Level Gate; (3)Drain to Source Voltage (Vdss) 30V; (4)Current - Continuous Drain (Id) @ 25℃ 5.3A, 7A; (5)Rds On (Max) @ Id, Vgs 22 mOhm @ 6.3A, 10V; (6)Vgs(th) (Max) @ Id 800mV @ 250μA; (7)Gate Charge (Qg) @ Vgs 12nC @ 5V; (8)Power - Max 1W, 1.25W; (9)Mounting Type Surface Mount; (10)Package / Case 8-SOIC (0.154, 3.90mm Width); (11)Supplier Device Package 8-SOIC N; (12)Packaging Tape & Reel (TR).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4818DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 6.3/9.5A |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Si4800 |
Other |
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Data Sheet |
Negotiable |
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 |
SI4800,518 |
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MOSFET N-CH 30V 9A SOT96-1 |
Data Sheet |
Negotiable |
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SI4800BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
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SI4800BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
Data Sheet |
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SI4800DY |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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SI4800DY-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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