Product Summary

The blf6g22-45 is a 180W LDMOS power transistor for base station applications at frequencies from 2000MHz to 2200MHz. The applications are RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range.

Parametrics

blf6g22-45 absolute maximum ratings: (1)VDS, drain-source voltage: 65V; (2)VGS, gate-source voltage: -0.5 to +13V; (3)Tstg, storage temperature: -65 to +150 °C; (4)Tcase, case temperature: 150 °C; (5)Tj, junction temperature: 225 °C.

Features

blf6g22-45 features: (1)Typical 2-carrier W-CDMA performance at frequencies of 2110MHz and 2170MHz, a supply voltage of 32V and an IDq of 1600mA; (2)Easy power control; (3)integrated ESD protection; (4)Excellent ruggedness; (5)High efficiency; (6)Excellent thermal stability; (7)Designed for broadband operation (2000 MHz to 2200 MHz); (8)internally matched for ease of use; (9)Qualified up to a supply voltage of 32 V.

Diagrams

blf6g22-45 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF6G22-45
BLF6G22-45
NXP Semiconductors
Transistors RF MOSFET Power LDMOS TNS
Data Sheet
Negotiable 
BLF6G22-45 /T3
BLF6G22-45 /T3
NXP Semiconductors
Transistors RF MOSFET Power LDMOS TNS
Data Sheet
Negotiable 
BLF6G22-45,112
BLF6G22-45,112
NXP Semiconductors
Transistors RF MOSFET Power LDMOS TNS
Data Sheet
0-41: $34.20
41-100: $31.94
BLF6G22-45,135
BLF6G22-45,135
NXP Semiconductors
Transistors RF MOSFET Power LDMOS TNS
Data Sheet
0-215: $31.94
215-250: $30.33
250-300: $30.33