(Hong Kong)
Product Summary
The flm6472-8f is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Parametrics
flm6472-8f absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 42.8 W; (4)Storage Temperature: -65 to +175 °C; (5)Channel Temperature: 175 °C.
Features
flm6472-8f features: (1)High Output Power: P1dB = 39.5 dBm (Typ.); (2)High Gain: G1dB = 9.5 dB (Typ.); (3)High PAE: ηadd = 35 % (Typ.); (4)IM3 = -46dBc@Po = 28.5dBm; (5)Broad Band: 6.4- 7.2GHz; (6)Impedance Matched Zin/Zout = 50Ω; (7)Hermetically Sealed.
Diagrams
