(Hong Kong)
Product Summary
The mrf10031 is a microwave power transistor. The mrf10031 is designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters.
Parametrics
mrf10031 absolute maximum ratings: (1)Collector–Emitter Voltage VCES: 55 Vdc; (2)Collector–Base Voltage (1)VCBO: 55 Vdc; (3)Emitter–Base Voltage VEBO: 3.5 Vdc; (4)Collector Current — Continuous (1)IC: 3.0 Adc; (5)Total Device Dissipation @ TC = 25°CPD: 110 Watts; (6)Storage Temperature Range Tstg: – 65 to + 200 °C; (7)Junction Temperature TJ: 200 °C.
Features
mrf10031 features: (1)100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR; (2)Hermetically Sealed Industry Standard Package; (3)Silicon Nitride Passivated; (4)Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration; (5)Internal Input Matching for Broadband Operation.
Diagrams
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Pricing (USD) |
Quantity | ||||
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 MRF10031 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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MRF1.6/5.6 |
Other |
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Data Sheet |
Negotiable |
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MRF1.6/5.6-AP-2.5C |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-AP-59U |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-BCUPA |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-LPJ-179U |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-LR-PC-1 |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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