Product Summary

The mrf412a is an NPN silicon rf power transistor. It is designed for applications as a high-power amplifier from 2.0 to 30MHz, in single sideband mobile, marine and base station equipment where superior ruggedness is required.

Parametrics

mrf412a absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 18 Vdc; (2)Collector–Base Voltage VCBO: 36 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 20 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 250 Watts, Derate above 25℃: 1.43 W/℃; (6)Storage Temperature Range Tstg: – 65 to +150 ℃.

Features

mrf412a features: (1)Specified 13.6 Volts, 30MHz characteristics: output power=70 Watts PEP or CW, Minimum gain=13 dB, Efficiency=40%, Intermodulation distortion d3=-33dB typ; (2)Guaranteed ruggedness @ 3.0 dB overdrive and 15.5 V supply.

Diagrams

mrf412a diagram