Product Summary

The mrf559 is a RF & microwave discrete low power transistor. Designed primarily for wideband large signal stages in the UHF frequency range.

Parametrics

mrf559 absolute maximum ratings: (1)VCEO, Collector-Emitter Voltage: 16 Vdc; (2)VCBO, Collector-Base Voltage: 30 Vdc; (3)VEBO, Emitter-Base Voltage: 3.0 Vdc; (4)IC, Collector Current: 150 mA.

Features

mrf559 features: (1)Specified @ 12.5 V, 870 MHz Characteristics; (2)Output Power = .5 W; (3)Minimum Gain = 8.0 dB; (4)Efficiency 50%; (5)Cost Effective Macro X Package; (6)Electroless Tin Plated Leads for Improved Solderability.

Diagrams

mrf559 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF559
MRF559
TriQuint Semiconductor
RF Amplifier RF Bipolar Trans
Data Sheet
Negotiable 
MRF559LF
MRF559LF
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $1.35
1-10: $1.13
10-25: $1.01
25-50: $0.90
MRF559G
MRF559G

TRANS NPN 16V 150MA MACRO X
Data Sheet
0-1: $1.59
1-10: $1.44
10-25: $1.28
25-100: $1.15
100-250: $1.03
250-500: $0.90
500-1000: $0.74
1000-2500: $0.69
2500-5000: $0.67