Product Summary
The mrfe6s9125nb is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of the mrfe6s9125nb make it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
Parametrics
mrfe6s9125nb absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +66 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Maximum Operation Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (1,2) TJ: 225 ℃.
Features
mrfe6s9125nb features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Integrated ESD Protection; (4)225℃ Capable Plastic Package; (5)RoHS Compliant; (6)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams

| Image | Part No | Mfg | Description |  | Pricing (USD) | Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|  |  MRFE6S9125NBR1 |  Freescale Semiconductor |  Transistors RF MOSFET Power HV6E 125W |  Data Sheet |  
 |  | ||||||||
| Image | Part No | Mfg | Description |  | Pricing (USD) | Quantity | ||||||||
|  |  MRFE6P3300HR3 |  Freescale Semiconductor |  Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML |  Data Sheet |  
 |  | ||||||||
|  |  MRFE6P3300HR5 |  Freescale Semiconductor |  Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML |  Data Sheet |  Negotiable |  | ||||||||
|  |  MRFE6P9220HR3 |  Freescale Semiconductor |  Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML |  Data Sheet |  
 |  | ||||||||
|  |  MRFE6P9220HR5 |  Freescale Semiconductor |  Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML |  Data Sheet |  Negotiable |  | ||||||||
|  |  MRFE6S8046GNR1 |  Freescale Semiconductor |  Transistors RF MOSFET Power HV6E 45W GSM |  Data Sheet |  
 |  | ||||||||
|  |  MRFE6S8046NR1 |  Freescale Semiconductor |  Transistors RF MOSFET Power HV6E 45W GSM |  Data Sheet |  
 |  | ||||||||
 (Hong Kong)
 (Hong Kong) 
                         
                        
 
                                    




