Product Summary

The tc518128afwl-10 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. The application: low noise and high gain amplifiers & Oscillator buffer amplifiers.

Parametrics

tc518128afwl-10 absolute maximum ratings of tc514800aftl-70 are (1)Collector-Emitter Breakdown Voltage VCEO: 3 V; (2)Collector-Base Breakdown Voltage VCBO: 5 V; (3)Emitter-Base Breakdown Voltage VEBO: 2 V; (4)Collector Current IC: 10 mA; (5)Collector Power Dissipation Pd: 30 mW; (6)Junction Temperature Tj: 150 ℃; (7)Storage Temperature Tstg: －65~+150 ℃.

Features

tc518128afwl-10 features of tc514800aftl-70 can be summarized as (1)Low current consumption and high gain: ∣S21e∣2 = 12dB ( typ. )at VCE= 2 V, IC= 7 mA, f = 2 GHz, ∣S21e∣2 = 11dB ( typ. )at VCE= 1 V, IC= 5 mA, f = 2 GHz; (2)Super mini-mold package.

Diagrams

tc518128afwl-10 pin connection