(Hong Kong)
Product Summary
The tim5964-7l is a microwave power GaAs FET.
Parametrics
tim5964-7l absolute maximum ratings: (1)Drain-Source Voltage VDS: 15V; (2)Gate-Source Voltage VGS: -5V; (3)Drain Current IDS: 26 A; (4)Total Power Dissipation (Tc= 25 °C)PT: 250 W; (5)Channel Temperature Tch: 175°C; (6)Storage Temperature Tstg: -65 to +175°C.
Features
tim5964-7l features: (1)low intermodulation distortion: IM3=-30 dBc at Pout= 42.0dBm, single carrier level; (2)high gain: G1dB=7.0dB at 5.9GHz to 6.4GHz; (3)broad band internally matched fet; (4)high power; (5)hermetically sealed package: P1dB=49.0dBm at 5.9GHz to 6.4GHz.
Diagrams
