(Hong Kong)
Product Summary
The mrf835 is an NPN silicon RF low power transisitor designed primerilyfor wideband large signal predriverstages in 800 MHz and UHF frequencyranges.
Parametrics
mrf835 absolute maximum ratings: (1)IC: 200 mA; (2)VCBO: 36 V; (3)PDISS: 1.0 W @ TC = 25 °C; (4)TJ: -65 °C to +150 °C; (5)TSTG: -65 °C to +150 °C; (6)θθθθJC: 40 °C/W.
Features
mrf835 features: (1)Min gain 8.0 dB @ 750 mW/870 MHz; (2)Silicon Nitride passivated; (3)Low cost Plastic Package.
Diagrams
